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IXFN230N10
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
miniBLOC, SOT-227 B
g fs
C iss
C oss
C rss
V DS = 10V, I D = 60A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
60
97
19
5600
2750
S
nF
pF
pF
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1 Ω (External)
40
150
112
60
ns
ns
ns
ns
M4 screws (4x) supplied
Q g(on)
Q gs
Q gd
R thJC
R thCS
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
570
70
290
0.05
nC
nC
nC
0.18 ° C/W
° C/W
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
Millimeter
Min. Max.
31.50 31.88
7.80 8.20
4.09 4.29
4.09 4.29
4.09 4.29
14.91 15.11
30.12 30.30
38.00
38.23
11.68
12.22
8.92
9.60
0.76
0.84
12.60
12.85
Inches
Min. Max.
1.240 1.255
0.307 0.323
0.161 0.169
0.161 0.169
0.161 0.169
0.587 0.595
1.186 1.193
1.496
1.505
0.460
0.481
0.351
0.378
0.030
0.033
0.496
0.506
Source-Drain Diode
N
O
P
25.15
1.98
4.95
25.42
2.13
5.97
0.990
0.078
0.195
1.001
0.084
0.235
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Q
R
S
T
26.54
3.94
4.72
24.59
26.90
4.42
4.85
25.07
1.045
0.155
0.186
0.968
1.059
0.174
0.191
0.987
I S
V GS = 0V
230
A
U
-0.05
0.1
-0.002
0.004
I SM
V SD
t rr
Q RM
I RM
Repetitive, pulse width limited by T JM
I F = 100A, V GS = 0V, Note 1
I F = 50A, -di/dt = 100A/ μ s, V R = 50V
1.2
9.0
920
1.2
250
A
V
ns
μ C
A
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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